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2SK3127
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS VI)
2SK3127
Chopper Regulator, DC-DC Converter and Motor Drive Applications
* * * * Low drain-source ON resistance: RDS (ON) = 9.5 (typ.) High forward transfer admittance: |Yfs| = 38 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 30 V) Enhancement-mode: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current Drain power dissipation DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 30 30 20 45 135 65 524 45 6 150 -55 to 150 Unit V V V A W mJ A mJ C C
Pulse (Note 1) (Tc = 25C)
Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA Weight: 1.5 g (typ.)
2-10S1B
Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: VDD = 25 V, Tch = 25C (initial), L = 186 H, RG = 25 , IAR = 45 A Note 3: Repetitive rating: pulse width limited by maximum junction temperature. Note 4: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic sensitive device. Please handle with caution.
JEDEC JEITA TOSHIBA
2-10S2B
Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 1.92 83.3 Unit C/W C/W
Weight: 1.5 g (typ.)
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2SK3127
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge tf toff Qg Qgs Qgd Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton Test Condition VGS = 16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 25 A VDS = 10 V, ID = 25 A VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 0 V, f = 1 MHz 10 V VGS 0V 4.7 ID = 25 A RL = 0.6 VOUT Min 30 1.5 19 Typ. 9.5 40 2300 380 1100 12 25 75 200 66 45 21 Max 10 100 3.0 12 ns nC nC nC Unit A A V V m S pF pF pF
VDD 15 V - Duty 1%, tw = 10 s VDD 24 V, VGS = 10 V, ID = 45 A - VDD 24 V, VGS = 10 V, ID = 45 A - VDD 24 V, VGS = 10 V, ID = 45 A -
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 45 A, VGS = 0 V IDR = 45 A, VGS = 0 V, dIDR/dt = 50 A/s IDR = 45 A, VGS = 0 V, dIDR/dt = 50 A/s Min Typ. 150 270 Max 45 135 -1.7 Unit A A V ns nC
Marking
K3127
Product No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
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2SK3127
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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